Symposium Chair: Prof. Qianqian Huang, Peking University, China
| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 22, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Pudong Ballroom 6
Session I: Advances in CMOS Technologies
Session Chair: Jun Yuan
| *13:30-13:55 | Backside Power Delivery: an Industry Perspective |
| Han Li, Southest University | |
| *13:55-14:20 | Design Strategies for High-Density CFET-Based SRAM |
| Vita Pi-Ho Hu, Taiwan University | |
| 14:20-14:35 | Investigation of Channel Stress in Monolithic CFET with Different SiGe Sacrificial Layers for A7 Technology Node |
| Lei Cao, Institute of Microelectronics of the Chinese Academy of Sciences | |
| 14:35-14:50 | Increasing NSFET Design Flexibility with SheetOpt™ |
| Dmitry Yakimets, Huawei Technologies R&D Belgium | |
| 14:50-15:05 | A High Selective Contacts Scheme for 3D Sequencial CFETs Via One-step Etching and Low-K Etch Stop Layer |
| Zhongshan Xie, Institute of Microelectronics of Chinese Academy of Science | |
| 15:05-15:15 | Break Time |
Session II: CMOS Reliability
Session Chair: Han Li
| *15:15-15:40 | Predicting Long Term Random Telegraph Noise: Challenge and Potential Solutions |
| Jianfu Zhang, Southest University | |
| *15:40-16:05 | Three-Dimensional Thermal Measurements of 3D Integrated Circuits |
| Zhe Cheng, Peking University | |
| 16:05-16:20 | Effect of Deuterium Thermal Treatment on Low Frequency Noise and Hot Carrier Injection Characteristics of Devices |
| Gang WANG, Hangzhou GHS Semiconductor Corporation | |
| 16:20-16:30 | Coffee Break |
| 16:30-18:00 | Panel Discussion(Meeting Room: Pudong Ballroom 1) |
Monday, March 23, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Pudong Ballroom 6
Session III: Memory and Computing I
Session Chair: Hongxiang Mo
| *08:45-09:10 | Self-Powered Memristor for Biomimetic Sensory Computing |
| Suting Han, Hong Kong PolyU | |
| *09:10-09:35 | Synaptic and Neural Behaviours in A Standard Silicon Transistor |
| Mario Lanza, National University of Singapore | |
| 09:35-09:50 | Two-Dimensional Hexagonal Boron Nitride Based Memristors for Spiking Neural Network |
| Yuzhe Lin, Zhejiang University | |
| 09:50-10:05 | High-Performance CMOS-Compatible Self-Rectifying Memristor Array Based on a-InGaZnO Films |
| Haoze Yu, Zhejiang University | |
| 10:05-10:20 | Transfer-Electrode Enabled Uniform and Reliable Switching in AlOx Volatile Memristors |
| Yichun Gong, Zhejiang University | |
| 10:20-10:35 | Coffee Break |
Session IV: Memory and Computing II
Session Chair: Hongxiang Mo
| *10:35-11:00 | In-Memory Computing for Large Language Model |
| Shaodi Wang, Witmem | |
| *11:00-11:25 | Spintronics for Unconventional Computing |
| Qiming Shao, The Hong Kong University of Science and Technology | |
| 11:25-11:40 | A Novel Hybrid TFET-CMOS CIM Accelerator Targeting Event-driven Intelligent Wake-up Chips for AIoT Applications |
| Rong Zhao, Anhui University | |
| 12:00-13:00 | Empowering: Women and Young Professionals Pioneering the Future of Electronics (with Lunch Box and Lucky Draw) |
| 13:00-13:30 | Break Time |
Session V: Advances in Ferroelectric Memories
Session Chair: Junwei Luo
| *13:30-13:55 | Chance and Challenges of FeRAM for Storage Class Memory |
| Huihui Li, Changxin Memory Technologies | |
| *13:55-14:20 | From Material Design to Device Optimization: Enabling Robust HZO Embedded FeRAM Reliability |
| Yiming Sun, Huawei Technologies Co., Ltd. | |
| *14:20-14:45 | Overcoming Depolarization Effects: Novel Strategies for Robust Ferroelectricity in Nanoscale HfO₂ and ZrO₂ |
| Ruyue Cao, University of Cambridge | |
| *14:45-15:10 | HfO₂ based FeFET for High Reliability Memory and Compute-in-Memory Applications |
| Kechao Tang, Peking University | |
| 15:10-15:25 | Enhancing Cryogenic Ferroelectric Performance of HZO Capacitors via ZrO₂ Interlayer Engineering |
| Jiayan Zhu, Peking University | |
| 15:25-15:40 | A Novel Anti-Ferroelectric FET-based Schmitt Trigger with Low Operating Voltage and High Hardware-Efficiency |
| Bingrui Song, Peking University | |
| 15:40-18:00 | Coffee Break |
| 16:00-18:00 | Poster Session |
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Tuesday, March 24, 2026, Kerry Hotel Pudong, Shanghai
Meeting Room: Function Room 2
Session VI: Advances in Emerging Channel Meterial Devices
Session Chair: Ming He
| *08:45-09:10 | High Performance Transistor and Memory Based on 2D Materials |
| Jiangbin Wu, Institute of Semiconductors, CAS | |
| *09:10-09:35 | Subnanosecond 2D Flash Memory |
| Chunsen Liu, Fudan University | |
| *09:35-10:00 | MOS Interfaces of Emerging Channel Materials (e.g., Ge, 2D Materials) |
| Mengnan Ke, Yokohama National University | |
| 10:00-10:15 | Hybrid 2t0c Cell with Oxide-Semiconductor/Silicon Transistors for Capacitor-Free DRAM |
| Lin Bao, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications | |
| 10:15-10:30 | Effects of HfAlOx Composition and Annealing Schemes on the Electrical Performance of IGZO TFTs |
| Hongrui Liu, Zhejiang University | |
| 10:30-10:45 | Break Time |
Session VII: Advances in Process, Power Devices and Photoconductor Devices
Session Chair: Ming He
| 10:45-11:00 | Design and Development of GaN-based Complementary Logic Integrated Circuits |
| Xuanming Zhang, Xi'an Jiaotong-Liverpool University | |
| 11:00-11:15 | Normally-Off P-GAN Gate HEMTS Enabled By Oxygen Plasma Treatment with Al₂O₃ Oxygen-Rich Capping Layer |
| Jiachen Duan, Xi'an jiaotong-Liverpool University | |
| 11:15-11:30 | Characterization of Cr-compensated GaAs Detector for X-ray Detection Applications |
| Zeyu Sun, Shanghai Jiaotong University | |
| 16:00-18:00 | Poster Session: Monday, March 23 (3F, Kerry Hotel Pudong, Shanghai) |
| 1-1 | PS-Level Testing Solution for TDC Measure in T2000 ISS |
| Bin Gong, Advantest | |
| 1-2 | Mass Production Scheme of CIS Test for 2-Channel Event Sensor on T2000 ISS |
| Bin Gong, Advantest | |
| 1-3 | A Process induced Program Disturb Issue and Solution for ESF3 Memory |
| Yaoyi Zhou, SMIC Beijing | |
| 1-4 | A N-Buffer Implantation Method for Safe Operation Area Improvement in Contact-Field-Plate LDMOS Device |
| Yiting Ye, Zhejiang University | |
| 1-5 | Complementary FET with Top Truncated CombFET for Enhanced Routing Efficiency at Advanced Technology Nodes |
| Xin Wang, Institute of Microelectronics, Chinese Academy of Sciences | |
| 1-7 | Improvement Of A Polycrystalline Silicon Doped DTI Structure |
| Shangze Wu, HuaHong Grace Semiconductor Manufacturing Corporation | |
| 1-8 | Design of a Rechargeable High-Voltage Resistant Resistor |
| Shangze Wu, HuaHong Grace Semiconductor Manufacturing Corporation | |
| 1-9 | Design of a High Voltage LDMOS |
| Shangze Wu, HuaHong Grace Semiconductor Manufacturing Corporation | |
| 1-10 | Design of a High Voltage Charging Diode |
| Shangze Wu, HuaHong Grace Semiconductor Manufacturing Corporation | |
| 1-11 | Electronic Properties of Silicon with Intrinsic Stacking Fault |
| Wenwen Fei, GHS Semiconductor Co. Ltd. | |
| 1-13 | Improving Switching and Static Characteristics of 60 V LDMOS: A Study on The Influence of Field Plate, Gate, and Drift Region Design |
| Boying Meng, Zhejiang University | |
| 1-14 | A Novel Doping Structure for a Low Dark Count Rate and High Photon Detection Efficiency SPAD |
| Juntao Zhang, Nanjing University | |
| 1-15 | Impact of the First Spacer Anneal on Device Performance Enhancement in CMOS Technology |
| Zi Qiu, Shanghai University | |
| 1-16 | Research on the Performance Improvement of 22nm NMOSFETS by High-Pressure Hydrogen Annealing |
| Huasong Liu, Shanghai University | |
| 1-17 | Improvement on Gate Disturb for SONOS Memory via Tuning Nitrogen-Oxygen Ratio of ONO Dielectric Layer |
| Jingsong Peng, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| 1-18 | A Mirror-Gate SONOS Memory with Program Operation by Hot Carrier Injection |
| Jingsong Peng, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| 1-20 | Design Technology Co-Optimization of a Hybrid Dual-κ Spacer Strategy for Sub-3-nm Nanosheet GAAFETs and Circuits Performance Enhancement |
| Meihe Zhang, Institute of Microelectronics of the Chinese Academy of Sciences | |
| 1-21 | The Improvement of Local CDU in Small OX via Etch |
| Brian Zhang, Advanced Micro-Fabrication Equipment Inc | |
| 1-37 | High-Performance LDMOS With A Novel Stepped-Field Plate Optimized by Simulation |
| Yiyang Yao, Zhejiang University | |
| 1-38 | High Resistance Induced SRAM Reverse Vmin Ratio |
| Yue Yang, GHS Semiconductor | |
| 1-39 | Band Gap Engineering for Enhanced Performance in Novel SONOS Flash Memory |
| Zikuan Yang, Zhejiang University | |
| 1-43 | Heated Ion Implantation Technology for FinFET Source Drain Extension Formation |
| Ruijun Cui, Shanghai Kingstone Semiconductor Joint Stock Co., Ltd. | |
| 1-44 | A Structurally Optimized Sion Passivation for High-Voltage MIM Capacitors |
| Wenbin Huang, Zhejiang University | |
| 1-46 | A TCAD and Experimental Study of Metal Ring for High-Voltage Capacitive Isolators |
| Huaxu Zhao, Zhejiang University | |
| 1-47 | A Trapezoid Fin/Nanowire Hybrid LDMOS for SoC Integration in GAA Technology |
| Chih-Sheng Keng, Zhejiang University | |
| 1-51 | A Verification of Hot-Hole Injection During Drain Disturb in NOR Flash |
| WanBo Geng, Hangzhou GHS Semiconductor Corporation | |
| 1-52 | A Novel Split-Gate MOSFET Design with Central Floating Field Plate for Enhanced Reliability in Silicon-Based Power Devices |
| Yiming Zhang, Zhejiang University | |
| 1-54 | Impact of Memory-Gate Length on Trap Rebalancing and Reliability in 3T2b SONOS Flash |
| Zhexuan LI, Zhejiang University | |
| 1-56 | Design and Optimization of 60V LDMOS in 0.18μm BCD Platform with Enhanced Performance via Asymmetric STI Engineering |
| Huan Zhong, Zhejiang University | |
| 1-61 | A Novel Silicon Fin-TFET Technology Based on Foundry Platform |
| Yifan Ma, Peking University | |
| 1-62 | Source Lifetime Improvement on HCS by Dedicated Carbon with Dilution Gas |
| Xiangdong Liu, Applied Materials China | |
| 1-63 | Surface Charging Control Engineering Enable Better Uniformity for Implant Performance |
| Li Cheng, Applied Materials China | |
| 1-64 | Application of Ni-Based Ohmic Contacts to 150mm n-Type 4H-SiC in XE+ |
| Yitong Guo, Applied Materials China | |
| 1-65 | Enhanced Gate Resistance (Rg) uniformity in IGBT Devices Using Superscan on VIIstaTM Trident XP2 |
| Helin Wang, Applied Materials China | |
| 1-66 | Successful Implementation of Dose Rate Matching of Fluorine Implantation |
| Yiqun Jiang, Applied Materials China | |
| 1-67 | A GNN-Based Surrogate Device Simulation Model for MOSFETs |
| Jiayi Xia, Zhejiang University | |
| 1-12 | Low-K Replacement Process for AC Performance Improvement on 28NM High-K Metal Gate Platform |
| Zhijian Huang, Shanghai Huali Integrated Circuit Manufacturing Co., LTD |