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Elpin Goh Senior Director, Specialty Technologies, Lam Research Corporation 泛林集团，客户支持事业部特色工艺资深总监 |
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讲师简介 / Speaker Bio Elpin Goh is Senior Director of Specialty Technologies at Lam Research. She is responsible for business strategy, development and planning in Lam’s Specialty Technologies. She also supports a very complex set of applications for all strategic business engagements in Specialty Technologies. Elpin works with various product owners at Lam to define product strategies and drive innovative product solutions to meet market demand and growth of Specialty Technologies. Prior to this, Elpin focused on sales account management in the region. Besides winning new applications and growing the business on the accounts she managed, she has led the team to deliver the strategic value initiative to her customers, including delivering innovative, trusted productivity and fast product solutions to enhance the capabilities of the fabs and increase the financial return of her customers. Elpin’s experience includes design and process integration, product management, sales and business development in the foundry and semiconductor equipment industry. She started her career as a process integration engineer at one of the leading foundries in the world – where she held various positions in process integration, customer engineering, product management and business development. Elpin received Master’s Degree in Electrical Engineering from National University of Singapore, Singapore. She also holds Bachelor’s Degree (1st Class Honours) from University of Manchester Institute of Science and Technology, UK. 摘要 / Abstract Third generation, wide bandgap semiconductor materials such as SiC and GaN can address a range of key applications. GaN in particular has huge potential in high power and high frequency applications. GaN HEMTs are already outperforming silicon based super junction MOSFETs in rapid charging applications and GaAs HEMTs in RF devices. This is driving rapid demand for such devices. For example, Yole Development are forecasting a CAGR rate of >50% for the GaN power device market over the next 5 years. Despite the on-going adoption of GaN devices, unique technical challenges associated with GaN HEMT fabrication still need to be addressed to further improve both device performance and reliability, and manufacturing productivity and yield. One example is the need for ultra-low damage, highly selective etch processes that have atomic scale precision. Lam is addressing this need through combining highly optimized steady state processes with pulsed plasma and atomic layer etch processes in the same high-volume, production proven process module. In addition to the etch challenges, there are numerous other plasma deposition and clean process steps that are also critical to improving GaN device performance. Notably, the passivation of the GaN transistor gates is an area where improvements in passivation quality and reduction in plasma induced damage have a significant benefit on device performance. So, we are using Lam’s single wafer clean solutions to optimize both the passivation process itself and the pre-passivation surface cleaning of the wafers. One of the key potential advantages of GaN on Si based technologies is the ability to integrate them into CMOS fabs and foundries which enables their heterogeneous integration with Si devices. However, this creates the need to manage gallium contamination on the wafer backside and bevel. This is another area where Lam is bringing our single wafer clean and bevel engineering experience to bear on GaN device fabrication. At Lam, we have focused on GaN on Si based HEMT and monolithically integrated IC devices for power management applications. However, we are already applying the learning to key GaN on Si RF applications and to other GaN based devices such as micro-LEDs. In this paper we will summarize the capabilities that we have developed to support GaN device manufacture and highlight some of the benefits that they are delivering to our customers. |
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