Krishna Sreerambhatla
Vice President, Head of SiC Epitaxy business, ASM
ASM副总裁，SiC外延业务负责人

讲师简介 / Speaker Bio

Krishna Sreerambhatla, Vice President, Head of SiC Epitaxy business at ASM, is a seasoned leader with over 25 years of experience in the semiconductor industry. Krishna leads strategic initiatives to drive innovation and growth in the SiC sector, overseeing product development, market expansion, and customer engagement.

Krishna joined ASM in 2020, as Vice President, Head of Mergers and Acquisitions, a role in which he defined the M&A strategy for the company and successfully led the acquisition of LPE, positioning ASM for growth in this exciting market. He was appointed as Vice President, Head of SiC Epitaxy business in 2022.

ASM, headquartered in Almere, the Netherlands, designs and manufactures equipment and process solutions to produce semiconductor devices for wafer processing. Before joining ASM, Krishna held various senior leadership roles at renowned organizations including Applied Materials, ASML, and NXP Semiconductors.

In addition to his corporate leadership, Krishna was actively involved in the venture capital and startup ecosystem focusing on early-stage deep tech investments.

Krishna holds an MBA from Rotterdam School of Management, Erasmus University, and a Bachelor's degree in Electrical Engineering from Indian Institute of Technology Delhi.

摘要 / Abstract

The silicon carbide (SiC) epitaxy process is one of the key manufacturing steps to enable SiC devices and has a significant impact on device performance and yield. ASM’s silicon carbide epitaxy system with single wafer horizontal cross flow reactor architecture enables best-in-class on-wafer epitaxy performance, footprint density and ease of serviceability at competitive productivity.

We are all witnessing the impending transition of the SiC industry from 6 to 8-inch wafers. The larger area of an 8-inch substrate and the higher costs of the substrate that are associated with it further amplifies the need for achieving high uniformity and low defectivity epitaxy. The specific architectural attributes of our reactor lend it well to enabling our customers to maximize the advantage of the enlarged wafer area, translating to more usable dies per area, and a reduction in the cost of ownership per die.

For over 50 years ASM has been at the forefront of innovation and what’s technologically possible. In this keynote presentation, we will share how ASM has been working to address the market challenges and meet growing demand of higher power efficiency and increased power density, driving the growth of electric vehicles together with our customers.