| ** | to designate keynote talk - 30 min | Sponsored by: |
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| * | to designate invite talk - 25 min | |||
| to designate regular talk - 15 min |
Sunday, March 14, 2021 Shanghai International Convention Center
Meeting Room:
Session I:
Session Chair:
| *13:30-13:55 | Advancing to the Next Node and Competing Globally Using Virtual Fabrication |
| Joseph Ervin, IMEC | |
| *13:55-14:20 | Advanced memory and logic patterning trends and Applied Material’s solutions to meet the technical challenges |
| Dimitri Kioussis, Applied Materials | |
| 14:20-14:35 | IMPROVEMENT OF FIN BRIDGE DEFECT FOR FINFETSTECHNOLOGY |
| Junhong Zhao, SMIC | |
| 14:35-15:00 | Coffee Break |
Session II:
Session Chair:
| *15:00-15:25 | Application Investigation of Co-Ti Alloy as Single Liner/Barrier in Advanced Co Interconnects |
| Luo Jun, IMECAS | |
| 15:25-15:40 |
Mechanism of reverse leakage current in Schottky diodes used in microelectronics |
| Wai Shing Lau, Xinjiang University | |
| 15:40-15:55 | IMPROVEMENT OF WAFER EDGE DEFECT FOR FINFETS TECHNOLOGY |
| Junhong Zhao, Semiconductor Manufacturing International Corp | |
Monday, March 15, 2021 Shanghai International Convention Center
Meeting Room:
Session III:
Session Chair:
| *8:30-8:55 | Area Selective Deposition: fundamentals and applications |
| Dr. Silvia Armini, Imec Belgium | |
| 8:55-9:10 | Developments of Improving STI Formation and Quality by Annealing for 28nm CMOS Technology Node & Beyond |
| Yan Sun, NAURA | |
| 9:10-9:25 | Interface chemistry in post-metal-anneal of Si/SiO2/HfO2/TiN gate stacks |
| Wu qingqing, Shanghai IC R&D Center | |
| 9:25-9:45 | Coffee Break |
Session IV:
Session Chair:
| *9:45-10:10 | (Virtual)Theoretical and Experimental Approach to Design CVD/ALD Processes |
| Yukihiro Shimogaki, Tokyo University | |
| 10:10-11:25 | Mechanism B I-V symmetry for MIM capacitors used in microelectronics |
| Wai Shing Lau, Nanyang Technological University | |
| 11:25-11:40 | Optimization for Thick Oxide Deposition in 3D NAND Application |
| Shasha Wang, Applied Materials | |
| 11:40-13:05 | Lunch Break |
Session V:
Session Chair:
| *13:05-13:30 | Monolithic Integration of Thin Film Photodiode with CMOS Technology for Infrared Imaging Applications |
| Yunlong Li, IMEC, Belgium | |
| 13:30-13:45 | Optimization of Selective Inhibition for Void-Suppressed Tungsten Gap-fill |
| Xin Gan, Lam Research | |
| 13:45-14:00 | Is A Universal Copper Plating Process Possible |
| Yun Zhang, Shinhao Materials LLC | |
| 14:00-14:20 | Coffee Break |
Session VI:
Session Chair:
| *14:20-14:45 | Keys to Extending Cu Interconnect to 3 nm and Shift to Alternative Conductor | ||
| Dr. Takeshi Nogami, IBM Research | |||
| 14:45-15:00 | Machine Learning Assisted In-situ Sensing and Detection on System of PECVD Depositing Hydrogenated Silicon Films | ||
| Yu-Pu Yang, National Central University | |||
| Poster Session: | |||
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Investigation on Channel Plasma Effect in Doped Tin-Oxide Thin-Film Transistors Using Experiments and Simulation | ||
| Zong-Wei Shang, Xiamen University | |||
| SPARC SiCO: New Contact Metal Liner in Logic Advanced Nodes | |||
| Cesar Ji, Lam Research | |||
| AMAT HDP-CVD IMD Particle Reduction and Mechanism | |||
| Tengfei Zhang, Applied Materials (China), Inc. | |||
| A Novel AMAT Helium Free Producer GT PETEOS Process to Reduce CoO | |||
| Wei Xia, Applied Materials (China), Inc. | |||
| Solutions of controlling Metal Gate Size and Profile for Logic FinFET Technology | |||
| Geng Jinpeng, Shanghai IC R&D Center | |||
| Optimization of Clean Recipe for Producer GT RPS and Clean Efficiency | |||
| Xiang Li, Applied Materials | |||
| Tunning of SiGe channel edge profile for 22 nm FDSOI application | |||
| Yongyue Chen, Shanghai Huali Integrated Circuit Corporation | |||
| A Novel Method to Mitigate TiN Chlorine Residues in DRAM | |||
| Guangyao Shen, Applied Materials | |||
| Modified Pre-clean Chamber for Via Rc and CuBS System Throughput Improvement | |||
| Caimin Meng, Applied Materials China | |||
| Cirrus HTX TiN Metal Hardmask for 14nm FinFET BEOL Application | |||
| Pingyuan Lu, Applied Materials China. Shanghai. China | |||
| Electromigration Performance Improvement by Cobalt Integration beyond 20nm Node | |||
| Qingxia Fan, Applied Materials China | |||
| Applied Materials? Novel Aluminum PVD Chamber for Bond Pad Fabrication | |||
| Chen Shen, Applied Materials China | |||
| In-situ Plasma Clean for PVD Chamber Electrostatic Chuck Preventive Maintenance | |||
| Chen Shen, Applied Materials China | |||
| AMAT SALD W for high AR via gap fill application | |||
| Qingjun Ni, Applied Materials | |||
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A Study of Post-Clean N2O Plasma Treatment for PECVD High Stress Silicon Oxide Film Thickness Uniformity Stability |
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| Min Shudi, Lam Research Service Co. Ltd. | |||
| Selective Growth Delay Performance Study of WCN on Various Substrate | |||
| Ao Yang, Lam Research Service Co.,Ltd | |||
| Applied Endura? Fluorine Free W Application for Low Metal Gate Resistance | |||
| Subo Cao, Applied Materials China | |||
| Selective Tungsten Deposition for 7nm and Beyond Contact Via Fill | |||
| Ning Ma, Applied Materials China | |||
| Applied Endura? ALD TiSiN for Advanced Metal Gate Barrier Application | |||
| Ze Yuan, Applied Materials | |||
| SiH4 Soak Impact on BEOL Cu RC Delay and Reliabilityn | |||
| Lam Research, Field Process Engineer | |||
| Influence of Different Pressures on Characteristics of Plasmas in PECVD Chamber | |||
| Xingyu Li, Jiangsu Normal University | |||
| Structural and Electrical Properties of Ti-C Thin Films for Metal Gate | |||
| Kamale Tuokedaerhan, Xinjiang University | |||
| Investigation of the optical properties of a-Si:H films deposited by PECVD using various experimental techniques | |||
| Yudong Zhang, Jiangsu Normal University | |||
| Good sensitivity and high stability of NaTaO3 humidity sensor | |||
| Min Zhang, Xinjiang University | |||