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Kechao Tang is now an assistant professor in the School of Integrated Circuits, Peking University, China. He received his B.S degree from Peking University, China, in 2012, and his Ph.D degree from Stanford University, USA, in 2017. Dr. Tang worked as a postdoctoral researcher in University of California, Berkeley, USA from 2017 to 2020. His current research interest includes emerging non-volatile memory devices, especially ferroelectrics memories based on hafnium oxide, and phase transition materials for novel electrical applications. Dr. Tang has authored more than 80 papers with a total citation over 5000 and an h-index of 31. He published papers as the first or the corresponding author in scientific journals and conferences including Science, Nature Materials, Science Advances, IEEE IEDM and IEEE VLSI etc.
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