(** to designate keynote talk, * to designate invite talk)
Monday, March 18, 2019 Shanghai International Convention Center
Meeting Room：3I+3J
Session I: CMP integration
Session Chair: Xin-Ping Qu
| **13:30-14:00 | Enablement Strategies to minimize inputs of CMP process in Mass production |
| Jichul Yang, SK HYNIX | |
| *14:00-14:25 | Beyond Planarization, into the Realm of Multifunctional Polishing |
| Dr. Hongjin Kim, Globalfoundries | |
| *14:25-14:50 | Opportunities and Challenges of CMP technology for advanced memory manufacturing |
| Dr. Yukiteru,Toshiba Memory Corporation | |
| *14:50-15:15 | Study and Improvement on Tungsten Recess in CMP Process |
| Dr. Lei Zhang, Shanghai Huali Microelectronics Corporation | |
| 15:15-15:30 | Coffee Break |
Session II: Novel CMP application
Session Chair: YuChun Wang
| *15:30-15:55 | The surface investigation of nano silica for CMP |
| Prof. Weili Liu, SIMIT | |
| *15:55-16:20 | Study on CMP Slurry with Graphene Oxide for Monocrystal SiC Wafer Polishing |
| Prof. Chao-Chang Chen, NTUST | |
| 16:20-16:35 | Chemical Mechanical Polishing of Semiconductor Wafers: Surface Element Modeling and Simulation to Predict Wafer Surface Shape |
| Kenneth Wilson Jr., Zhichao Li, North Carolina A&T State University | |
| Zhen Li, Houjun Qi, Tianjin University of Technology and Education | |
| Qi Zhang, Yangzhou University | |
| 16:35-16:50 | Optimization on Chemical Mechanical Planarization of chromium doped antimony telluride (Cr-SbTe) for PCM Devices |
| Luguang Wang, Fang Wang, Yuxiang Li, Jinrong Huang, Wei Li, Kailiang Zhang, Tianjin University of Technology |
Tuesday, March 19, 2019 Shanghai International Convention Center
Meeting Room: 3I+3J
Session III: Pad
Session Chair: Jin-Goo Park
| *8:30-8:55 | A Study on the Mechanical Role of Pad Asperities in Chemical-Mechanical Polishing |
| Prof. Sanha Kim, Korea Advanced Institute of Science and Technology | |
| *8:55-9:20 | Post CMP Cleaning: Challenges and Defect Improvement Approaches |
|
Katrina Mikhaylich, AMAT |
|
| 9:20-9:35 | HPPC for Pad Profile and Lower CoC |
| Yunlong Wu, Changxing Tan, Xiang Lei, Runtao Zhao, Applied materials | |
| 9:35-9:50 | Effect of Pad-asperity Contact on Material Removal Rate in Chemical Mechanical Polishing |
| Lin Wang, Ping Zhou, Ying Yan, Dongming Guo, Dalian University of Technology | |
| 9:50-10:05 | Effect of Pad Grooves on Slurry Flow-field in Removal Rate and Uniformity of Oxide CMP |
| Yu-Hao Pan, Suzhou IV Technologies | |
| 10:05-10:20 | Within Wafer & Wafer to Wafer Thickness Uniformity Controllable Study on ILD-CMP via Polishing Pad's Physical Property Analysis and Linear Interval Feedback APC's Implementation |
| Zhijie Zhang, Hongdi Wang, SMIC | |
| 10:20-10:35 | Coffee Break |
Session IV: CMP slurries
Session Chair: KC Wu
| *10:35-11:00 | Advances in CMP Formulations Technology |
| Dr. Hongjun Zhou, Versum | |
| *11:00-11:25 | High rate ceria slurry and pad combo solution for bulk oxide CMP |
| Dr. Jinfeng Wang, Cabot | |
| *11:25-11:50 | Ceria Slurry for Bulk Oxide and Selective CMP Applications |
| Dr. Ethan Yin, Anji Microelectronics | |
| 11:50-12:05 | A New Nanoparticle Characterization Technology for CMP Slurries |
| Siqin He, Derek Oberreit, David Blackford, Kanomax FMT | |
| Gary Van Schooneveld, CT Associates | |
| 12:05-13:30 | Lunch Break |
Session V: Post CMP cleaning
Session Chair: David Huang
| *13:30-13:55 | The Characteristics of PVA Brushes in Post CMP Cleaning |
| Prof. J.G. Park, Hanyang University | |
| *13:55-14:20 | Numberical simulation of marangoni drying in post-cmp clenaing |
| Dewen Zhao, Tsinghua University | |
| 14:20-14:35 | Advances of Oxide CMP and PCMP Clean Process - A Total Solution toward Superior Defect Performance |
| Yi Guo, Robert Auger, Dow Electronic Materials, CMP Technology | |
| Jhih-Fong Lin, Wei-En Huang, Chi Yen, EKC Technology | |
| 14:35-14:50 | Effect of Wafer Wettability on Marangoni Drying Performance in post-CMP Cleaning |
| Changkun Li, Bingquan Wang, Dewen Zhao, Xinchun Lu, Tsinghua University | |
| 14:50-15:05 | Study on Different Surfactants for Post CMP Cleaning of Novel Barrier |
| Siyu Tian, Baimei Tan, Qi Wang, Chunyu Han, Liu Yang, Baohong Gao, Hebei University of Technolog, Tianjin Key Laboratory of Electronic Materials and Devices | |
| 15:05-15:20 | Coffee Break |
Session VI: Back-end technology
Session Chair: Dr. Jing-Xun Fang
| *15:20-15:45 | CMP mechanism of GISI multilevel interconnect | ||
|
Chenwei Wang, Hebei University of Technology |
|||
| 15:45-16:00 | Effect of Ammonium Ion on Chemical Mechanical Polishing of Ru | ||
| Ziyan Wang, Jianwei Zhou, Chenwei Wang, Jiajie Zhang, Qingwei Wang, Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronic Information Engineering, Hebei University of Technology | |||
| 16:00-16:15 | Effect of BTA Derivative on Reduction of Galvanic Corrosion Between of Ru and Cu During CMP | ||
| JiaJie Zhang, Jianwei Zhou, Chenwei Wang, Ziyan Wang, Qingwei Wang, Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology | |||
| 16:15-16:30 |
Effect of TT-LYK as the inhibitor on Step Height Reduction for Copper CMP |
||
| Jiakai Zhou, Xinhuan Niu, Jianchao Wang, Kai Zhang, Yaqi Cui, Zhi Wang, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices | |||
| Poster Session: | Location: 5th Floor | ||
| Coffee Break | Development of a Standard Evaluation System to Characterize and Quantify Pad Foam Morphology for Chemical Mechanical Polishing (CMP) | ||
|
Hassan Zuburtan, Zhichao Li, North Carolina Agricultural & Technology State University |
|||
| Zhenyun Chu, Shandong University of Science and Technology | |||
| Qi Zhang, Yangzhou University | |||
| Pad Wear Compensation Application for Cu CMP on the Reflexion LK Prime System | |||
| Lin Wang, Neil Zhong, Runtao Zhao, Frank Ren, Ganming Zhao, Applied Materials | |||
| iAPC: A Closed-Loop Process Control System | |||
| Yongbin Wei, Runtao Zhao, Neil Zhong, Lei Zhu, Applied Materials | |||
| Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning | |||
| Yang Liu, Tan baimei, Liu yuling, Gao baohong, Han chunyu, Hebei University of Technology | |||
| Application of New Generation Real-Time Cu Thickness Profile Control in Cu CMP | |||
| Changxing Tan, Ying Xu, Runtao Zhao, Applied Materials | |||
| Study on infrared specturm detection and analysis of BTA residual after copper CMP | |||
| Qi Wang, Baimei Tan, Siyu Tian, Chunyu Han, Liu Yang, Baohong Gao, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices | |||
| Study on the Properties of Nano-silica Colloid with Mixed Particle Size in Sapphire Substrate CMP | |||
| Weiwei Li, Zhen Liang, Zhilin Zhao, Hebei University of Technology | |||
| Effect of compound complexing agent on CMP polishing of copper wiring | |||
| Cong Wang, Yuling Liu, Chenwei Wang, Huihui Zhang, Nengyuan Zeng, Fengxia Liu, Hebei University of Technology | |||
| Effect of Chelating Agent on the Galvanic Corrosion between Copper and Tantalum based Alkaline Polishing Surry | |||
| Jiacheng Qi, Guofeng Pan, Chenwei Wang, Chao Huang, Lianjun Hu, Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology | |||
| Study on Chemical Mechanical Polishing of R-plane Sapphire by Different Additives | |||
| Yaqi Cui, Xinhuan Niu, Jianchao Wang, Da Yin, Jiakai Zhou, Zhi Wang, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices | |||
| Effect of Chelation and Oxidation on Reducing Galvanic Corrosion between Cobalt and Copper in Alkaline Slurry | |||
| Chao Huang, Guofeng Pan, Jiacheng Qi, Chenwei Wang, Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology | |||
| Chemical mechanical material removal of silicon dioxide by a single pad asperity | |||
| Shuo Yang, Lin Wang, Ping Zhou, Ying Yan, Zhuji Jin, Dalian University of Technology | |||
| Effect of Galvanic Corrosion Inhibitors on Copper during Chemical Mechanical Polishing Process of Ruthenium | |||
| JiaJie Zhang, Jianwei Zhou, Chenwei Wang, Ziyan Wang, Qingwei Wang, Hebei University of Technology | |||
| Uniformity improvement and particle counts reduction by using non-ion surfactant in the weakly alkaline barrier slurry | |||
| Cong Wang, Yuling Liu, Cheiwei Wang, Huihui Zhang, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices | |||
| Potassium Tartrate as A Complexing Agent for Cobalt "Buff Step" CMP in Alkaline Slurry | |||
| Tingwei Liang, Shengli Wang, Chenwei Wang, Fengxia Liu, Hebei University of Technology | |||
| Effect of Ammonium sulfate and H2O2 on Cobalt Contact bulk Chemical Mechanical Polishing | |||
| Fengxia Liu, shengli Wang, Chenwei Wang, Qiyuan Tian, Tingwei Liang, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices | |||
| Analysis of JFC Adsorption Effect on Surface Roughness of Aluminum for Alkaline CMP by EIS | |||
| Zhi Wang, Ming Sun, Xinhuan Niu, Jiakai Zhou, Yaqi Cui, Hebei University of Technology | |||
| Optimization and Characterization of Wafer-Level Hybrid Bonding Interface | |||
| Shipu Li, Jun Qian, Wuzhi Zhang, Chang Sun, Shanghai Huali Microelectronics Corporation | |||
| Electrochemical and Surface Analysis of the Chemical Induced Defects with Aluminum Gate CMP | |||
| Ming Sun, Zhi Wang, Hebei University of Technology | |||
| The CMP effect of Potassium Molybdate with BTA as Compound Corrosion Inhibitor used in CMP of the TSV Heterogeneous Microstructure | |||
| Bingquan Wang, Changkun Li, Yuhong Liu, Xinchun Lu, Tsinghua University | |||
| ReaxFF Molecular Dynamics Simulation of Material Removal Mechanisms During CMP Process of Silica Glass in Aqueous H2O2 | |||
| Xiaoguang Guo, Chong Chen, Renke Kang, Zhuji Jin, Dalian University of Technology | |||