(** to designate keynote talk, * to designate invite talk)
Sunday, March 11, 2018 Shanghai International Convention Center
Meeting Room：5th Floor Yangtze River Hall长江厅
Session I: Integration -- FEOL
Session Chair: Zhen Guo
| **13:30-14:00 | Extension of 14nm FinFET Technology with High Performance, Ultra Low Power and High Density for Different Applications |
| Owen Hu, Global fundry | |
| *14:00-14:25 | All-ALD high-k/metal gate as an enabler for FinFETs and nanowire FETs |
| Zhao Chao, IME | |
| 14:25-14:40 | Investigation on The Leakage of Triple Split-gate Flash Device And Its Improve Solution |
| Zigui Cao, HHGrace | |
| 14:40-14:55 | Hybrid Integration of FDSOI and Si Bulk for CMOS Process |
| Song Yang, Huali | |
| 14:55-15:25 | Coffee Break |
Session II: Integration -- BEOL
Session Chair: Zhao Chao
| **15:25-15:55 | Materials/Process Innovations required for High Performance BEOL interconnects | ||
| Griselda Bonilla, IBM | |||
| *15:55-16:20 | Patterning Challenges in 193i-based Tip to Tip in N5 Interconnects | ||
| Basoene Briggs, IMEC | |||
| *16:20-16:45 | Metal Interconnect Considerations for Logic 5 nm Node and Beyond | ||
| Steve Lai, Lam Research | |||
| 16:45-17:00 | A Particle Free Method to Monitor Aktiv Pre-Clean in Barrier & Seed Process | ||
| Qintong Zhang, SMNC | |||
| 17:00-17:15 | Characteristic and Applications in Copper Interconnect of TaN Deposited by Atomic Layer Deposition | ||
| Aiji Wang, SMNC | |||
| Poster Session: | Location: 5th Floor | ||
| Coffee Break | Optimization of backside metal deposition in power IC process for suppression of wafer warpage and film peeling issue | ||
| Rick Zhang, SMIC | |||
| A technique for improving contact filling with aluminum | |||
| Chunling Liu, HHGrace | |||
| Emitter-Base Short Issue Study and Improvement in a Low Cost and High Performance 0.18um SiGe BiCMOS Process | |||
| Donghua Liu, HHGrace | |||
| Advanced Mass Flow Controllers (MFC) with EtherCAT Communication Protocol and Embedded Self Diagnostics | |||
| Kevin Findleton, Brooks Instrument | |||
| Fin Doping for 14nm FinFET Technology | |||
| Shanrong Li, SMIC | |||
| The Study of TiN Residues Formation Mechanism and Removal Solution on Bondpad Surface in PI/PA Mask Combined Process | |||
| Xu Jie, HHGrace | |||
| MANAGEMENT OF TEOS-CVD PROCESS TOOL EXHAUSTS IN 3D-NAND MANUFACTURING | |||
| Andrew Chambers, Edwards Ltd | |||
| Hydrogen Based High Strain Si:P Epitaxy Process Development and Optimization | |||
| Jin Yang, AMAT | |||
| Aktiv(APC) Preclean Application for Advanced Copper Metallization | |||
| Guilong Wu, Liechao Luo, Weiye He, Lei Zhang, Qingshan Zhang, Qingxia Fan, Jian Kang, AMAT | |||
| Hardmask TiN Stress Analysis and Effect on Back of End Line Integration | |||
| Qingshan Zhang, AMAT | |||
| Improving PVD W Adhesion | |||
| Lei Zhang, AMAT |
Monday, March 12, 2018 Shanghai International Convention Center
Meeting Room: 5th Floor Yangtze River Hall长江厅
Session III: Thin Film -- FE / ALD
Session Chair: Beichao Zhang
| **8:30-9:00 | Plasma enhanced ALD technology & worldwide applications |
| Toshihisa Nozawa, ASM, VP | |
| *9:00-9:25 | Thin Film Process Technologies for Continued Scaling |
| Robert Clark, TEL | |
| *9:25-9:50 | Overview of ALD Applications for Advanced CMOS Technology |
| Xiaoping Shi, Naura | |
| 9:50-10:05 | Conformal SiGe selective epitaxial growth for advanced CMOS technology |
| Yiqun Liu, SMIC | |
| 10:05-10:20 | Effect of Additional N2 Flow on Surface Particle Reduction for HARP-STI Process |
| Bin Wu, SMNC | |
| 10:20-10:35 | Coffee Break |
Session IV: Thin Film -- BE / Plating
Session Chair: Huang Liu
| **10:35-11:05 | Co alloy for Middle of Line for Fin FET of sub-7 nm |
| Junichi Koike, Tohoku University | |
| *11:05-11:30 | Electrochemical ALD - A New Paradigm for Enabling Aggressive Scaling in BEOL Interconnect Metallization |
| Yezdi Dordi, Lam Research | |
| 11:30-11:45 | Effect of Idle Time on the Property of Ultra Low-k Dielectric Film |
| Wenrong Hou, SMNC | |
| 11:45-12:00 | Effect of Bridging and Terminal Alkyl Groups on Critical Properties of Porous OSG Low-k films |
| Jing Zhang, North China University of Technology | |
| 12:10-13:30 | Lunch Break |
Session V: Thin Film -- Others
Session Chair: Xiaoping Shi
| *13:30-13:55 | Low Temperature Microwave Annealing for CMOS Scaling |
| Bharat Krishnan / Rinus T.P. Lee, Global fundry | |
| *13:55-14:20 | In-situ plasma monitoring of PECVD nano-crystalline a-Si:H(i)/ a-Si:H (n) surface passivation for Heterojunction Solar cells Application |
| Tomi Li, National Central University | |
| *14:20-14:45 | PVD Systems for Advanced Packaging Applications |
| Peijun Ding, Naura | |
| 14:45-15:00 | The Morphological evolution of Aluminum Whisker Defect Etched by Cl2 gas and its Reduction Method in 12-inch wafers |
| Han Zhang, SMNC | |
| 15:00-15:15 | Coffee Break |
Session VI: New technology
Session Chair: Larry Zhao
| **15:15-15:45 | Fully Printable and Autonomously Powered Electronic Nodes for the Internet of Everything |
| Paul Berger, Ohio State University | |
| *15:45-16:10 | Flexible Silicon/Germanium Nanomembranes for Integrative 3D Devices |
| Yongfeng Mei, Fu Dan University | |
| 16:10-16:25 | Advanced ion beam technology to trim surfaces in the 0.1nm range |
| Sebastian Gatz, Meyer Burger AG | |
| 16:25-16:40 |
The proposal and application of the hole Smoluchowski effect to explain the current-voltage characteristics of high-k MIM capacitors |
| Wai Shing Lau, Zhejiang University | |
| 16:40-16:55 |
Engineering implication of the correlation between the leakage current in high-k dielectric materials and the electronic defect states detected by zero-bias thermally stimulated current spectroscopy |
| Wai Shing Lau, Zhejiang University | |