(** to designate keynote talk, * to designate invite talk)
Sunday, March 11, 2018 Shanghai International Convention Center
Meeting Room: 3B
Session I: Advanced CMOS Devices and Technologies
Session Chair: Cor Claeys
| **13:30–14:00 | Nanosheet Transistor for 5nm Technology and Beyond Aiming High Performance and Low Power Applications |
| Huiming Bu, IBM | |
| *14:00–14:25 | ACTIVE-PERFORMANCE BENCHMARK FOR ADVANCED 3D-CMOS DEVICES |
| Hitoshi Wakabayashi | |
| *14:25–14:50 | CMOS Scaling – Past, Present, and Future |
| Kangguo Cheng, IBM | |
| 14:50–15:05 | Introduction of 95nm SPOCULL Technology |
| Honglin Zeng, SMIC | |
| 15:05–15:20 | Coffee Break |
Session II: Beyond CMOS and HBT Devices
Session Chair: Min-hwa Chi
| *15:20–15:45 | Negative Capacitance: Principle, Practice, and Limitation |
| Cheol Seong Hwang, Seoul National University | |
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*15:45–16:10 |
Innovative Graphene-based Remote Epitaxy & layerTransfer-EPI Growth & Device Applications |
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Jeehwan Kim, Massachusetts Institute of Technology |
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*16:10–16:35 |
Opposite Trends between Digital and Analog Performance for Different TFETs Technologies |
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Paula Ghedini Der Agopian, Sao Paulo State University (UNESP) |
| *16:35–17:00 | III-V GaAs and InP HBT Device for 4G & 5G Wireless Applications |
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Colombo R. Bolognesi, Eidgenössische Technische Hochschule Zürich |
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| Poster Session: | Location: 5th Floor |
| Coffee Break | Effect of Barriers Thickness on the Threshold Voltage of AlGaN/AlN/GaN MOSHEMTs |
| Rajab yahyazadeh, Islamic Azad university | |
| Modeling of Transconductance for AlInN/AlN/GaN MOSHEMT | |
| Rajab yahyazadeh, Islamic Azad university | |
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Effect of Barrier Thickness on the Sheet Carrier Concentration of HEMTs |
| Rajab yahyazadeh, Islamic Azad university | |
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Endurance Analysis Of Split Gate EEPROM Memory Cell |
| Liang Qian, HHGrace | |
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Improvement of 28HKMG NIO device HCI by Implant Scheme and Sequence Optimize Doping Profile and E-field |
| Tao Jia Jia, SMIC | |
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Equivalent Circuit Models for Strained Silicon NMOSFETs Using Verilog-A |
| Wang Guanyu, Chongqing University of Posts and Telecommunications | |
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7um Pitch Deep Trench Superjunction Process Development |
| Zhimin Zhu, HHGrace | |
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A STUDY OF LDMOS LAYOUT OPTIMIZATION OF 28HKMG FOR RF APPLICATION |
| Guiying Ma, SMIC | |
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A Study Of 28nm LDMOS Linear drain current degradation induced by hot carrier injection |
| Guiying Ma, SMIC | |
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An Optimized Contact Glue Layer Process to Reduce Wafer Edge Peeling Defect |
| Tian Chao, SMNC | |
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Ascertainment of Flicker Noise Modeling in Subthreshold Region of MOSFETs |
| Chien-Lung Tseng, SMIC | |
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Investigation and Three Implementations for Low Power Self-Aligned 1.5-T SONOS Flash Device |
| Zhaozhao Xu, HHGrace | |
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Substrate Current Improvement for a 25V N-type LDMOS |
| Ziquan Fang, HHGrace | |
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Improvement of bond pad crystal defect by new aluminum pad film stack |
| Junhong Zhao, Huali | |
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Performance and area scaling benefits of embedded SRAM used for TFT-LCD driver IC |
| Junhong Zhao, Huali | |
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A technique for fabricating low voltage Charge-Coupled MOSFET with 0.9 um pitch size |
| L. Shi, J.K. Shen, J.Z. Miao, Y.P. Wang, HHGrace | |
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28nm High Density SRAM bit cell design and Manufacture study |
| Hu Meili, SMIC | |
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A Compact Model of Analog RRAM for Neuromorphic Computing System Design |
| Wenqiang Zhang, Institute of Microelectronics, Tsinghua University | |
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Optimization of RF performance and reliability of 28V RF-LDMOS |
| CaiYing, HHGrace | |
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Reversed Trapezoid Trench Profile Formation with Silicon Nitride Confinement |
| Shiliang Ji, SMIC | |
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An improved yield model for embedded flash |
| Xuyun, HHGrace | |
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The Impact of Sub Oi on EWS and Reliability of Power Mos |
| Li Xiuying, HHGrace | |
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A Novel SCR ESD Protection Structure for RF Power Amplifier |
| Chunguang Wang, Peking University | |
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EFFECT OF WAFER EDGE CUT ON TESTING AND YIELD |
| Yuxiang Zhang, HHGrace | |
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Efficient Multi-Bit SRAMs Using Nanostructures Field-Effect Transistors (Nano-FETs) |
| Bander Saman, Taif university | |
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Exploitation of Active Area Patterning Rounding Modeling |
| Yuning Yu, SMIC | |
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A Method for Measuring Resistance of Metal Interconnection inside Chip |
| Chenjie Zhou, HHGrace | |
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A Novel SMT/SAB Approach for STI Oxide Loss Reduction and Leakage Improvement |
| Qian Xiao, Huali | |
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TiSi2 Formation and Mechanism through Ultra-thin Al2O3 Intermediation |
| Peilin Hao, Peking University | |
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A New Method For Traversing Memory Address Based On VECTOR Function |
| Qingwen Zhang, HHGrace | |
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First-Principles Study on Ge1-XSnX-Si Core-Shell Nanowire Transistors |
| Feng Xu, Tsinghua University | |
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Advanced Pre-clean for Selective Epitaxy on 3D NAND Flash |
| He Yang, AMAT | |
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Significant Defect Reduction on Nickel Silicide with DSA Process |
| Qinggang Zhou, AMAT | |
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A study on special hexagonal defects originating from wet clean process |
| Chengpeng QIN, AMAT | |
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A Physical Current Model for Junction-Modulated Tunneling Field-Effect Transistor with Steep Switching Behavior |
| Zhu Lv, Peking University | |
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Benchmarking of Multi-Finger Schottky-Barrier Tunnel FET for Ultra-low Power Applications |
| Jiadi Zhu, Peking University, Institute of Microelectronics | |
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STUDY ON MICROSCOPIC MODEL OF RESISTIVE SWITCHING IN AMORPHOUS TANTALUM PENTOXIDE FROM FIRST-PRINCIPLE CALCULATIONS |
| LinBao, Peking University | |
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Performance evaluation of Tunneling Field Effect Transistor on Terahertz Detection |
| Qixuan Yang, Nanjing University | |
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Study on NBTI Improvement of HfO2-based 14 nm P-type FinFET with Post High-k Deposition Thermal Treatment |
| Wen Wang, SMIC | |
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Impact of epitaxy profile on FinFET device performance |
| Zifang He, SMIC | |
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Parasitic resistance and effective mobility extraction in 14nm HKMG Bulk FinFET Device |
| Wei Liu, SMIC | |
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Plasma surface interactions pertinent to precision cyclic etching |
| Peter L.G. Ventzek, TEL | |
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Introducing low K SiGe S/D Dummy Mask Layer for 28nm HKMG MOSFET Performance Improvement |
| Hai Liu, SMIC | |
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Impact of Al electrode in TaOX-based RRAM devices |
| Jinshi Zhao, Tianjin University of Technology | |
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A study of metal oxide resistive switching based on the electronic switching mechanism |
| Jinshi Zhao, Tianjin University of Techonology | |
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Simulation for the Feasibility of High-Mobility Channel in 3D NAND Memory |
| Zhaozhao Hou, IME | |
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Self-aligned Metallic Source and Drain Fin-on-Insulator FinFETs with Excellent Short Channel Effects down to 20 nm Gate Length |
| Qingzhu Zhang, IME | |
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Engineering Resistive Switching Behavior in TaOX Based Memristive Devices for Non-von Neuman Computing Applications |
| Jingxian Li, Peking University |
Monday, March 12, 2018 Shanghai International Convention Center
Meeting Room: 3B
Session III: Advanced Nonvolatile Memory Technology
Session Chair: Chung Lam
| *8:30–8:55 | Emerging Three-dimensional Memory Technologies |
| Yoon Kim, Pusan National University | |
| *8:55–9:20 | Nonvolatile Memory Outlook: Technology Driven or Application Driven |
| Jing Li, University of Wisconsin-Madison | |
| *9:20–9:45 | Investigation of Hysteresis Phenomena in 3-D NAND Flash Memory Cells Using Pulse Measurement |
| Jong-Ho Lee, Seoul National University | |
| *9:45–10:10 | Confined Phase Change Memory for M-type Storage Class Memory |
| Wanki Kim, IBM | |
| 10:10–10:25 | Coffee Break |
Session IV: Novel Devices for Neuromorphic Computing and Nonvolatile Logicn
Session Chairs: Jong-Ho Lee / Yimao Cai
| **10:25–10:55 | Phase-change-memory Devices for Non-von Neumann Computing |
| Evangelos S Eleftheriou, IBM | |
| *10:55–11:20 | Unconventional computing with memristive neural networks |
| Joshua Yang, University of Massachusetts | |
| *11:20–11:45 | MTJ-Based Nonvolatile Logic LSI for Ultra Low-Power and Highly Dependable Computing |
| Masanori Natsui, Tohoku University | |
| *11:45–12:10 | Emulation of the human brain by nanodevices at different scales |
| Yuchao Yang, Peking University | |
| 12:10–13:30 | Lunch Break |
Session V: Device Reliability and Advanced Technology
Session Chairs: Wensheng Qian
| *13:30–13:55 | FEOL Reliability in Advanced FinFET Technologies |
| Miaomiao Wang, IBM | |
| *13:55–14:20 | Do We Have to Worry about Extended Defects in High-mobility Materials |
| Eddy Simoen, IMEC/University of Ghent | |
| *14:20–14:45 | Predictive As-grown-generation Model for NBTI of Advanced CMOS Devices and Circuits |
| Zhigang Ji, Liverpool John Moores University | |
| *14:45–15:10 | Device and Process Technologies for Extending Moore’s Law |
| Sangwan Kim, Ajou University | |
| 15:10-15:25 | Resistive switching and synaptic plasticity in HfO2-based memristors with single-layer and bilayer structures |
| Qingxi Duan, Peking University | |
| 15:25–15:40 | Coffee Break |
Session VI: Emerging Device Technologies
Session Chair: Hong Wu
| *15:40-16:05 | Smart IC Technologies for Smart Devices in IoT applications |
| Min-hwa Chi, SMIC | |
| *16:05-16:30 | Applications of Organic Semiconductors and Recrystallized Silicon Devices |
| Ioannis (John) Kymissis, Columbia University | |
| 16:30-16:45 | Dielectric breakdown in hexagonal boron nitride dielectric stacks |
| Mario Lanza, Soochow University | |
| 16:45-17:00 | SYNTHESIS OF MoS2 VIA IN SITU SULPHURIZATION SPUTTERING Mo |
| Wei Junqing, Tianjin University of Technology | |