| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 20 min |
Monday, June 26, 2023 Shanghai International Convention Center
Meeting Room: 5th Floor Yangtze River Hall
Session I: Lithography / Etch joint session (II & III)
Session Chair:
| 13:30-13:35 | Opening Remarks |
| **13:35-14:05 | Lithography Material Challenge |
| Allen Chang, JSR | |
| **14:05-14:35 | Co-advancing Scaling Techniques and Functionality Enhanced Potential Device Infrastructures |
| David Xiao | |
| **14:35-15:05 | An ocean of opportunities in a fast growing market using ASML TWINSCAN systems |
| Henri van Helleputte, ASML Netherlands B.V. | |
| 15:05-15:30 | Coffee Break |
Session II: Lithography Materials
Session Chairs: Zhimin Zhu / Xiaoming Ma
| 15:30-15:50 | A Positive-Tone Photosensitive Polyimide Material for Semiconductor Packaging |
| Yongqiang Wang, Jinan ShengQuan New Materials Limited | |
| **15:50-16:20 | Recent progress of EUV resist development for improving Chemical Stochastic |
| Toru Fujimori, FUJIFILM Corporation | |
| *16:20-16:45 | From micro to nano, and beyond, --- Measuring Innovations --- |
| Zhigang Wang, Hitachi High-Tech Corporation | |
Tuesday, June 27, 2023 Shanghai International Convention Center
Meeting Room: 5th Floor Yangtze River Hall
Session III: Process and Simulation
Session Chairs: Yuyang Sun / Da Yang
| **8:30-9:00 | Challenges of the Advanced Lithography for the Next Decade |
| Yasin Ekinci, Paul Scherrer Institute | |
| 9:00-9:20 | Modification of Organic Underlayer by Plasma During Dry Etching and its Effect on the Film Properties |
| Soojung Leem, DuPont Electronics & Industrial | |
| *9:20-9:45 | CycleGan-based mask diffraction model |
| Yijiang Shen, Guangdong University of Technology | |
| 9:45-10:05 | Illumination optimization for the BEOL DTCO with 45 degree local interconnection |
| Xianhe Liu, Fudan University | |
| 10:05-10:30 | Coffee Break |
Session IV: Computational Lithography
Session Chairs: Ken Wu / Yayi Wei
| 10:30-10:50 | Process and tool monitor and diagnosis based on overlay data and modeling |
| Yi Tong, Guangdong Greater Bay Area Institute of Integrated Circuit and System | |
| 10:50-11:10 | The Analysis of Optical Critical Dimension Signal Strength Between 5 nm FinFET and 3 nm CFET Vertical Gate Stacks |
| Qi Wang, Fudan University | |
| **11:10-11:40 | The Possibility of Using 193 nm Immersion Lithography Process for 5 nm Logic Design Rules |
| Qiang Wu, Fudan University | |
| 11:40-13:30 | Lunch Break |
Session V: Next Generation Lithography
Session Chairs: Wei-Min Gao / Motokatsu Imai
| 13:30-13:50 | Enhancement of pattern depth in plasmonic lithography for practical application |
| Dandan Han, University of Chinese Academy of Sciences | |
| *13:50-14:15 | DUV Mask Writer addressable to 90nm nodes with a Sustainability Profile |
| Youngjin Park, Mycronic Co. Ltd. | |
| *14:15-14:40 | Patterned wafer defect inspection at advanced technology nodes |
| Jinlong Zhu, Huazhong University of Science and Technology | |
| Poster Session: | |
| Comprehensive optimize 22nm contact correction assisted by rigorous model | |
| Tongguang Ge, Shanghai Huali Integrated Circuit Corporation | |
| Study on optical proximity correction method of D-I transition pattern in Metal of 22nm chip | |
| Wenhao Sun, Shanghai Huali Integrated Circuit Corporation | |
| Etch model accuracy improvement using SEM image contours | |
| Ting He, Semiconductor Manufacturing International (Shanghai) Corporation | |
| Study on inter-layer overlay of stitching lithography technology | |
| Hongmin Liu, Semiconductor Manufacturing International Corp. | |
| A Negative-tone Photosensitive Epoxy Material | |
| Ke Bai, Shandong Shengquan New Materials Co. Ltd. | |
| New model-based scattering bar local repair method for 2D pattern | |
| Ge Zhang, Semiconductor Manufacturing International Corporation | |
| Process window improvement method based on AA | |
| Xiandi Guo, Shanghai Huali Integrated Circuit Corporation | |
| Kissing corner rounding improvement by special OPC | |
| Jiao Yuan, Semiconductor Manufacturing International Corporation | |
| A SRAF Method to Improve Process Window in Metal Layer | |
| Wei Wei, Shanghai Huali Integrated Circuit Corporation | |
| The Method of CT Overlay and Yield Improvement by Optimizing the Profile of Front Layer | |
| Zhejun Liu, Shanghai Huali Integrated Circuit Corporation | |
| Study on-product overlay improvement for immersion lithography | |
| Guoping Liu, Shanghai Huali Integrated Circuit Corporation | |
| Line-End Roundness and Voids Improvement of BEOL Metal Layer | |
| Mudan Wang, Shanghai Huali Integrated Circuit Corporation | |
| OPC Correction Method Based on Corner to Corner Structure | |
| Qiguang Zhou, Shanghai Huali Integrated Circuit Corporation | |
| Layout pattern analysis and coverage evaluation in computational lithography | |
| Yaobin Feng, Huazhong University of Science and Technology | |