| ** | to designate keynote talk - 30 min | |||
| * | to designate invite talk - 25 min | |||
| to designate regular talk - 20 min |
Monday, June 26, 2023 Shanghai International Convention Center
Meeting Room: 3rd Floor Yellow River Hall
Session I: Advanced Device and Technology for Intelligent Chips
Session Chair: Zhongrui Wang
| **13:30-14:00 | Bioinspired in-sensor computing for artificial vision |
| Yang Chai, HK Polytechnique University | |
| *14:00-14:25 | Architectures and Chips of "Sensing with Computing" for Intelligent Continuous Perception |
| Fei Qiao, Tsinghua University | |
| *14:25-14:50 | High Density Integrated Intrinsically Stretchable Electronics |
| Yuqing Zheng, Peking University | |
| *14:50-15:15 | 2D NEMS and 2D Electronics for Energy-Efficient Sensing and Computing |
| Rui Yang, Shanghai Jiao Tong University | |
| 15:15-15:30 | Coffee Break |
Session II: In-Memory Compute Technologies
Session Chair: Fei Qiao
| *15:30-15:55 | Memristor-based Reservoir Computing |
| Zhongrui Wang, University of Hong Kong | |
| *15:55-16:20 | In-Memory Computing for Machine Intelligence |
| Bonan Yan, Peking University | |
| *16:20-16:45 | Low Carbon Chips for Emerging Zeta-scale Computing |
| Hao Yu, Southern University of Science and Technology | |
| *16:45-17:10 | Hardware-Based Neural Networks Using Flash Memory Technologies |
| Sungmin Hwang, Korea University Sejong Campus | |
| 17:10-17:25 | Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory for Binary Neural Networks |
| Boyi Fu, Peking University | |
| 17:25-17:40 | HFXZR1-XO2 FERROELECTRIC THIN FILM GRAIN SIZE TUNING VIA ANNEALING RAMP RATE ACHIEVING ENDURANCE >10^9 CYCLES, 2PR OF 40.6 µC/CM^2, WRITE VOLTAGE DOWN TO 1.5 V, AND SWITCHING SPEED OF 30 NS |
| Jun Lan, Southern University of Science and Technology | |
Tuesday, June 27, 2023 Shanghai International Convention Center
Meeting Room: 3rd Floor Yellow River Hall
Session III: Device and Technology
Session Chair: Bonan Yan
| **8:30-9:00 | Hybrid 2D/CMOS Microchips for Memristive Applications |
| Mario Lanza, King Abdullah University of Science and Technology (KAUST) | |
| *9:00-9:25 | High Performance Electronic Devices Based on Novel Materials for Logic and Memory Applications |
| Yanqing Wu, Peking University | |
| *9:25-9:50 | Ferroelectric Devices as Next Generation Low-Power Logic Technology: NCFETs |
| Sihyun Kim, Sogang University, Korea | |
| *9:50-10:15 | Functional circuits based on 2D semiconductors |
| Wenzhong Bao, Fudan University | |
| 10:15-10:30 | Large Area CVD MoS2 Memristor Suitable For Neuromorphic Applications |
| Xuewei Feng, Shanghai Jiao Tong University | |
| 10:30-10:45 | The Study on Reducing Bit line Parasitic Capacitance in Advanced DRAM |
| Yexiao Yu, ChangXin Memory Technologies | |
| 10:45-10:55 | Coffee Break |
Session IV: Advanced Device Technology
Session Chair: Hao Yu
| *10:55-11:20 | Low Temperature Ge CMOS for Future M3D Technology |
| Heng Wu, Peking University | |
| 11:20-11:35 | Technologies for Superior Reliability in SiC Power Devices |
| Min-hwa Chi, Micro-Nano Technology College, Qingdao University | |
| 11:35-11:50 | Leakage Reduction of GAA Stacked Si Nanosheet CMOS Transistors and 6T-SRAM Cell via Spacer Bottom Footing Optimization |
| Xuexiang Zhang, Institute of Microelectronics, Chinese Academy of Sciences | |
| 11:50-12:05 | Experimental Investigation of Ultra-low Temperature La2O3/HfO2 Bi-layer Dipole-first Process Using PVD Method for Advanced IC Technology |
| Yanzhao Wei, Institute of Microelectronics, Chinese Academy of Sciences | |
| 12:05-12:20 | A Compact Sawtooth Wave Generator Based on Novel Z²-Fet Device |
| Hui Xie, Fudan University | |
| 12:20-13:30 | Lunch Break |
| Poster Session: | |
| Fabrication and Characterization of a Novel Embedded Mirror Gate SONOS | |
| Ning Wang, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| High endurance SONOS technology improved by design &process optimization | |
| Pingsheng Zhou, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Promoting Chip Probing Test Yield by Simple ISSG and Global Wet Process | |
| Jingsong Peng, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| An On-chip Superconducting Quantum Transponder | |
| Rutian Huang, Tsinghua University | |
| Design and simulation of a superconducting switch based on weakly damped superconducting quantum interference devices | |
| Xinyu Wu, Tsinghua University | |
| 55NM ULTRA LOW LEAKAGE PLATFORM DEVELOPMENT | |
| Yifan Ding, Shanghai Huali Microelectronics Corporation | |
| Optimization of crack in active area on 50 nm ETOX NOR Flash | |
| Jiayu Ma, Shanghai Huali Integrated Circuit Corporation | |
| RESEARCH ON VT WINDOW IMPROVEMENT PROCESS OF 2T SONOS EMBEDDED FLASH | |
| Xiaokang Li, Shanghai Huali Microelectronics Corporation | |
| RESEARCH ON VT WINDOW IMPROVEMENT PROCESS OF SONOS EFLASH IN COMBINATION WITH 55NM ULTRA-LOW POWER LOGIC TECHNOLOGY | |
| Wencan Xu, Shanghai Huali Microelectronics Corporation | |
| An Effective Method to Minimize the Difference between Spot and Ribbon Beam by Co-implantation | |
| Long Feng, Semiconductor Manufacturing North China (Beijing) Corp. | |
| Study of Breakdown Voltage improvement of High-voltage PLDMOS | |
| Wenting Duan, HuaHong Grace Semiconductor Manufacturing Corporation | |
| The Optimization of the specific on-resistance of 60V shield gate trench MOSFET with low doped epitaxial layer | |
| Xiaoqing Cai, HuaHong Grace Semiconductor Manufacturing Corporation | |
| A Better Al Filling Gate Mass-Production Technology at 28 nm High-K/Metal Gate CMOS | |
| WenZhao Fu, Shanghai Huali Integrated Circuit Corporation | |
| Study of the formation of Copper void defect and process optimization for reduction in dual damascene process | |
| Hongliang Zhu, Semiconductor Manufacturing International Corporation | |
| Study on N-Type MOSCAP Capacitor and Range in 55nm CMOS | |
| Hongliang Zhu, Semiconductor Manufacturing International Corporation | |
| Research on Performance Improvement of 40V NEDMOS | |
| Chongkai Du, Shanghai Huali Microelectronics Corporation | |
| INVESTIGATION OF A NEW DISTURB EFFECT IN THE AGGRESSIVELY SCALED DUAL-BIT/CELL SPLIT-GATE FLOATING-GATE FLASH CELL | |
| Zhaozhao Xu, Huahong Semiconductor (Wuxi) Limited | |
| Important Process Parameter and Its Sensitivity Check by Virtual Fabrication: Channel Hole Profile Impact on Advanced 3D NAND Structure | |
| Qingpeng Wang, Coventor, Inc., A Lam Research Company | |
| FinFET Source/Drain Parasitic Resistance Optimization by TCAD Simulation | |
| Tongtong Luan, ShanghaiTech University | |
| Simulation Study of Gate-All-Around Nanosheet Devices Based on SOI Structure | |
| Yangyang Hu, Shanghai University | |
| Full Well Capacitance of Small Size CMOS Image Senor：Improvement and stability control | |
| Xiaoyu Li, Shanghai Huali Microelectronics Corporation | |
| Investigation of electrical characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2 for Dynamic Random Access Memories | |
| Kun Zhong, Institute of Microelectronics, Chinese Academy of Sciences | |
| Investigation of the doping profile for ion implants and rapid annealing in silicon via an improved method | |
| Zeqi Zha, Semiconductor manufacturing International (Beijing) Corporation | |
| Novel Channel-On-Fin (COF)IGZO-TFTs with Ultra-Scaled Back Gate Length of 23 nm | |
| Shangbo Yang, Institute of Microelectronics, Chinese Academy of Sciences | |
| Investigation of vertical channel IGZO-TFT based on PVD-IGZO | |
| Zhiyu Song, Institute of Microelectronics, Chinese Academy of Sciences | |
| A Compact Model of Non-volatile Ferroelectric Tunnel FET with Ambipolarity for In-memory-computing | |
| Hanyong Shao, Peking University | |
| Investigation of Synergic Hydrogen Mitigation Technique for Top-Gate a-IGZO Thin-Film Transistors | |
| Gangping Yan, Beijing Superstring Academy of Memory Technology | |
| Characterization of Field Cycling Fatigue in HfZrOx Ferroelectric Capacitors | |
| Puyang Cai, Peking University | |
| Reliability Performance of Novel Tunneling Field Effect Transistors Based on Foundry Platform | |
| Yukun Tang, Shanghai Jiaotong University | |
| Mechanism and data fusion characterization of Si-doped c-BAs | |
| Chun Wang, Northeastern University | |
| A Method for Sharp Corner Rounding of Active Area to Improve the Reliability of 2Xnm NAND Flash Devices | |
| Zhiguo Li, Semiconductor Manufacturing International Corporation | |
| Predicting Iread Worst-Case Corner of SRAM based on Statistical Probability | |
| Zongkang Zeng, Semiconductor Manufacturing International Corporation | |
| Methods of Fast Prediction for the Worst Iread using Confidence Interval | |
| Chaoyue Qu, Semiconductor Manufacturing International Corporation | |
| Influence of Interfacial Layers and High-k Post Dielectric Annealing on the Characteristics of MOS Devices | |
| Guanqiao Sang, Institute of Microelectronics, Chinese Academy of Sciences | |
| Optimized Wafer Edge Condition in Lithographic Process For Peeling Defect Improvement in 28nm Technology | |
| Shanshan Chen, Shanghai Huali Integrated Circuit Corporation | |
| SILICIDE PROFILE OPTIMIZATION ON ACTIVE AREA IN 4XNM ETOX NOR FLASH MEMORY | |
| Yuxin Tong, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Improvement of Standby current failure by device optimization on 4Xnm ETOX NOR-flash memory | |
| Zhuangzhuang Wang, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Effects of floating gate profile on Cell Characteristics of 4Xnm FG-first ETOX NOR-flash memory | |
| Yihang Du, Shanghai Huahong Grace Semiconductor Manufacturing Corporation | |
| Improved Environmental Stability of N-type Polymer Field-Effect Transistors using Nickel Contact Electrodes | |
| Yuan Liu, Nanjing University of Posts and Telecommunications | |
| A New Method to Calculate Loading Effect in Embedded Flash | |
| Fangce Sun, HuaHong Grace Semiconductor Manufacturing Corporation | |
| A New Method to Improve Split Gate Flash Erase and Endurance | |
| Fangce Sun, HuaHong Grace Semiconductor Manufacturing Corporation | |