SEMICON China - Symposium V (2020)

**	to designate keynote talk - 30 min	Sponsored by:
*	to designate invite talk - 25 min
	to designate regular talk - 15 min

Online Conference
Parallel Symposium Oral Sessions:	June 29-July 17, 2020

Symposium Chair: Xin-Ping Qu
Symposium Co-chairs: Yuchun Wang and Jingxun Fang

Session I: CMP Integration
**	Lead the future
	Tsujimura Manabu, Ebara Corp.
*	Solving CMP challenges for chemically stable materials and 3D shapes
	Hitoshi Morinaga, FUJIMI Incorporated
*	Post CMP Cleans Evolution and Defect Improvement Approaches
	Katrina Mikhaylichenko, Applied Materials
Session II: CMP Slurry
*	Stop on nitride slurry development
	Shoutian Li, Anji Microelectronics
Session III: FEOL CMP
*	Novel Abrasion-free CMP Technology with High Performance Polishing Slurry
	Yuling Liu, Hebei University
	Study of Ceria Settling in CMP Slurry
	Li Zhang, Anji Microelectronics
	iAPC WiW for Wafer-Edge Profile Control in FEOL CMP
	Yunlong Wu, Applied Materials
Session IV: CMP Profile
*	Sidewall characterization and 3D-AFM applications
	Tae-Gon Kim, Hanyang University
*	Pattern loading effect optimization of BEOL Cu CMP in 14nm technology node
	Zhang Lei, Huali
	High-K Metal Gate Al-CMP within die Uniformity and Selectivity Study
	Ziheng Li, SMNC
Session V: Metal CMP(I)
*	The adsorption and removal of corrosion inhibitors during metal CMP
	Jin-Goo Park, Hanyang University
Session VI: Modeling
*	Modeling of chemical mechanical polishing incorporating the effect of micro contact of polishing pad
	Ping Zhou, Dalian University of Technology
	Molecular dynamics study on sub-nanoscale removal mechanism of 3C-SiC in a fixed abrasive polishing
	Piao Zhou, Nanjing University of Aeronautics and Astronautics
Session VII: Metal CMP(II)
	Role of Slurry Chemistry for Defects Reduction during Barrier CMP
	Chenwei Wang, Hebei University of Technology
	Role of slurry Additions on Chemical Mechanical Polishing of Cu/Ru/TEOS in H2O2-based Slurry
	Chao Wang, Hebei University of Technology
	Effect of various Surfactants on surface Roughness Reduction during Cobalt "Buff step" CMP
	Yuanshen Chen, Hebei University of Technology
Session VIII: Compound CMP
	Mechanism Analysis of Silicon Surface and Carbon Surface CMP of 4H-SiC Wafer
	Gaoyang Zhao, Shanghai Institute of Microsystem and Information Technology
	Investigation on the gallium nitride polishing process under hybrid-field effects
	Zhigang Dong, Dalian University of Technology
	Effect of potassium salts on the Chemical Mechanical Polishing Efficiency of Sapphire Substrate
	Lu Yanan, Hebei University of Technology

Conference Poster Session:

June 26-July 17, 2020

	Study on Cleaning Process of Large Size Sapphire Substrate after CMP
	Zhen Liang, Hebei University of Technology
	A Study of Causes and Improving Methods of Chipping in BSI Process
	YurongCao, HLMC
	Study on the Properties of Silica Colloid Prepared by Different Processes in Silicon Wafer CMP
	Li Weiwei, Hebei University of Technology
	Metal Clear Sensor- A Residual Free Solution for Al CMP in 28HKMG Technology
	Yunhong Hou, Applied Materials China
	Far-Edge “Check Mark” Profile Control for CMP
	Youlai Xiang, Applied Materials China
	AMAT High Performance Pad Condition(HPPC) --- A Novel Process Control System
	Qiaofeng Zhang, Applied Materials China
	Creating a Cu CMP ISRM Segment to Prevent Cu Residue Defect in 28nm Logic Technology
	Wang Lin, Applied Materials China
	TiN CMP Endpoint Development for 45nm PCRAM
	Wang Lin, Applied Materials China
	Full Vision XE for Profile Control in Advanced Applications
	Ying Xu, Applied Materials
	FullVision™ XE with MPC In-Situ Profile Control for Oxide CMP
	Changxing Tan, Applied Materials
	Impact of bevel condition on STI CMP scratch
	Meng yuanyuan, HLMC
	Material removal mechanism of copper during the chemical mechanical polishing process under pad-asperity scale
	Lin Wang, Dalian University of Technology
	Effects of Heat Treatment in Air Environment on the Dispersivity of Nanodiamond
	Xiaoguang Guo, Dalian University of Technology
	Effect of Complexing agent in Slurry on CMP property for Barrier Material Cobalt
	Jinsong Zuo, Tianjin University of Technology
	Investigation on Alkaline Based Fumed Silica Slurry pH Effect on Oxide CMP Micro Scratch and Improvement method
	Xueliang Li, Cabot Microelectronics Corporation
	Recycling Slurry by Bleed and Feed Method for Chemical Mechanical Planarization of Mono Silicon Wafer
	Wei-Chin Pu, Chao-Chang Chen, National Taiwan University of Science and Technology
	Role of Diethylenetriamine Pentaacetate Pentapotassium in Barrier Slurry for Copper Barrier Chemical Mechanical Planarization
	Huo Zhaoqing, Hebei University of Technology
	Effect of Potassium Oleate as the Inhibitor on Copper CMP
	Yang Chenghui, Hebei University of Technology
	Effects of different inhibitors on Cu-Co galvanic corrosion in post CMP cleaning
	Xiaoqin Sun, Hebei University of Technology
	Effect of chelators on the removal of BTA in post-CMP cleaning
	Liu Mengrui, Hebei University of Technology
	Effect of TT-LYK on Copper CMP with Ru/Ta as barrier/liner
	Xue Zhang, Hebei University of Technology
	Effect of Various Complexing Agents for Cobalt "bulk step" Chemical Mechanical Planarization
	Yundian Yang, Hebei University of Technology