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Di Geng received the Ph. D. degree from the Kyung Hee University, Seoul, Korea, where he is currently a professor with the Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China. His current research interests include design and fabrication of oxide FET device for memory and display applications. Prof. Di has published more than 30 articles in Nature Electronics and IEDM/VLSI, and so on. He is current leading the development of oxide FET in 2T0C DRAM application.
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