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Dr. Klaus Schuegraf is Vice President for New Products & Solutions with PDF Solutions. He is responsible for incubating concepts and technologies into new products with focus on PDF's revolutionary Design for Inspection DFI™.
Dr. Schuegraf has broad experience in semiconductor technology and product development in dynamic random access memory (DRAM), static random access memory (SRAM), complementary metal oxide semiconductors (CMOS), non-volatile NAND flash memory, and semiconductor capital equipment.
Prior to PDF Solutions, Dr. Schuegraf was Group Vice President for EUV Development & Engineering with the Cymer Technologies Division of ASML. There he was responsible for leading Cymer's EUV source development activities from early prototype hardware towards a volume-capable product. Previously, Dr. Schuegraf was Corporate Vice President and Chief Technology Officer (CTO) for the Silicon Systems Group (SSG) at Applied Materials, Inc., where he was responsible for the company's strong heritage of technology leadership and innovation, aligning the company's technology roadmap with business objectives, increasing SSG's differentiated product portfolio and ensuring value to customers by leveraging understanding of technology inflections. Prior to Applied Materials, Dr. Schuegraf was Vice President of Technology at SanDisk Corporation, where he worked to define and execute the company's non-volatile NAND flash and 3D memory road map and directed the implementation of a new 300mm pilot line. Prior to SanDisk, he served as a Senior Director at Cypress Semiconductor Corporation, leading the development of thec the company's mixed-signal programmable-system-on-chip (pSoC) microcontroller products. Prior to Cypress, he led CMOS and memory development teams at Conexant Systems, Microchip Technology and Micron Technology.
Dr. Schuegraf has guided technology program committees for the Institute of Electrical and Electronics Engineers (IEEE), including the Memory Technology Committee for the International Electron Devices Meeting (IEDM), the International Memory Workshop, and the International Reliability Physics Symposium and the IEEE Electron Devices Society Semiconductor Manufacturing Committee.
Dr. Schuegraf received a Ph.D. in electrical engineering from the University of California, Berkeley under the guidance of Professor Chenming Hu, world-renowned expert on semiconductor device reliability physics and non-volatile memories and a master of science degree in electrical engineering from Stanford University. He holds more than 85 patents and has authored more than 30 technical publications.
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