** to designate keynote talk - 30 min Sponsored by:  
* to designate invite talk - 25 min
  to designate regular talk - 15 min

Sunday, March 14, 2021 Shanghai International Convention Center
Meeting Room:

Session I: Metrology I
Session Chairs:
13:30-13:35 Chairman Remarks: Peilin Song
 
**13:35-14:05 Mass Metrology Solution for 3D Process-Monitoring
  Dr. Jiangtao Hu, Lam Research, USA
14:05-14:20 Implementation of Spectral Interferometry for Enhanced Critical Dimensions Optical Metrology
  Moran Ofer, Nova Measuring Instruments, Israel
14:20-14:35 Advantages of Picosecond Ultrasonic Technology for Advanced RF Metrology
  Johnny Dai, Onto Innovation Inc., USA
14:35-15:30 Coffee Break
 

Session II: Metrology II
Session Chair:
*15:30-15:55 Mid-Infrared Critical Dimension Ellipsometry and Advanced Machine Learning to Address Complex Semiconductor Manufacturing
  HaoChen, Advantest
15:55-16:10 Inline Thickness Measurement for Thick Amorphous Silicon Film by Spectroscopic Ellipsometry Method
  Bo Zhang, HHGrace
16:10-16:25 OCD Signal Study under the Normal and Oblique Incidence Metrology Architectures
  Aihua Yang, Shanghai IC R&D Center
16:25-16:40 Mask Design method for Un-patterned Dark Field Defect Inspection System
  Shuang Xu, Wuhan University of Science and Technology
 

Monday, March 15, 2021 Shanghai International Convention Center
Meeting Room:


Session III: Test
Session Chair:
8:30-8:45 An Efficient Way of Developing 5G MIMO Transceiver Test on ATE
  HaoChen, Advantest
8:45-9:00 Complex Protocol Construct System on ATE Platform
 

Xin Song, Man Cao, Advantest

9:00-9:15 Test challenges for 5G wireless base station application device
  SongXin, YanZexin, Advantest
9:15-9:30 Universal Semiconductor ATPG Solutions for ATE Platform under the Trend of AI and ADAS
  Qimeng Wang, Advantest

Session IV: Diagnosis and Yield
Session Chair:
10:30-10:45 PICA analysis of CMOS Circuits Using SIL Measurement
  Lin Shang Chih, Gallant Precision Machining Co.,Ltd.
10:45-11:00 Research on Multi-stage Architecture Backside Monitoring and Controlling Network in Advanced Micro-electro Mechanical
 

JianGang Zhou, Shanghai Huali Integrated Circuit Corporation

11:00-11:15 Convolutional Neural Network (CNN) Based Automated Defect Classification (ADC) with Imbalanced DataCapability
  Hairong Lei, ASML-HMI
11:15-11:30 An Adaptive De-noise System for Sub-nm Scale Failure Analysis Based on TEM Image
  Chang Xu, Fujian Jinhua Integrated Circuit Co., Ltd.
11:30-13:30 Lunch time



SESSION V:Reliability
Session Chair:
*13:30-13:55 Reliability
  Jonathan White, Synopsys, US
13:55-14:10 An effective approach to monitor potential reliability failure in the advanced devices
 

Moran Ofer, Nova Measuring Instruments

14:10-14:25 The Gate Length Dependence of Single Event Upset in 14nm bulk and SOI FinFET SRAM Cells
  Jingyi Liu, Peking University
14:25-14:40 Board-level thermal cycle simulation and improvement of 2.5D large-size package
  Shiyu Chen, ZTE Corporation
14:40-15:50 Coffee Break


Session VI: Fab Management
Session Chair:
15:30-15:45 Throughput Improvements via Logistics in Current Semiconductor Factories
  George W. Horn, Middlesex Industries Sa
15:45-16:00 350 kg Sapphire Inspection Facility Open Doors for Complete Defect Traceability across LED Manufacturing Process
 

Ivan Orlov, Scientific Visual

16:00-16:15 R2R Based Alternating Direction Method of Multi-parameter Control Strategy
  Huating Huang, Fujian Jinhua Integrated Circuit Co., Ltd.
16:15-16:30 A Dynamic Sampling Algorithm based on Cost-Risk Assessment Model in Semiconductor Manufacturing
  Sen Wang, Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.(XMC)
Poster Session:
  New Register Configuration Solution for High Speed IO Test
  Zhang Tianyu, Advantest
  EFFECTS OF DIFFERENT GATE STRESS CONDITIONS ON HOT CARRIER INJECTION IN HIGH VOLTAGE N-CHANNEL CMOS
  Lei Li, Semiconductor Manufacturing International Corporation
  A New Solution of Power Management IC One Time Programable Test
  Yong Liang, NXP Semicondoctors
  Reliability Investigation between 2-terminal and 4-terminal Kelvin Structure in Terms of WLR IsoEM and PLR EM for Metal Interconnection
  Dingrui Zhang, Semiconductor Manufacturing International Corporation
  The Failure Mechanism of Drain Bias TDDB and characterization of lifetime Modal for HV De-PMOS
  Weihai Fan, Semiconductor Manufacturing International Corporation
  Electro-migration Behavior Study on Metal Line Width and Length of AlCu Interconnects
  JiZhou Li, Semiconductor Manufacturing International Corporation
  Experimental Study on Void Growth and EM Performance under DC Reversal
  Dingrui Zhang, Semiconductor Manufacturing International Corporation
  Defect principle and improvement of 28nm germanium silicon epitaxial growth process
  Qu Yan, Shanghai Huali Integrated Circuit Corporation
  The Strong Effect of Spectral Mode and Directional Electrical Field for Nuisance Filtering in Defect Inspection
  Xingdi Zhang, Shanghai Huali Integrated Circuit Corporation
  Impact of the stress on reference voltage of power SIP chip applied in 5G based station
  Qiong Jin, ZTE Corporation
  A Method to Enhance the Hot Carrier Injection Effect of IONMOS device
  Shuang Jiao, Shanghai Huali Microelectronics Corporation
  ATE Test Solution for High Resolution and High Voltage DAC
  Tianyu Zhang, Advantest
  Machine Learning Based Prediction of aging caused path-delay degradation
  Qi Wei, ZTE Sanechips Corporation
  THE INVESTIGATION OF INLINE TINY BUBBLE DEFECT INSPECTION AND SOLUTION FOR 14NM PHOTOLITHOGRAPHY PROCESS
  Yin Long, Shanghai Huali Integrated Circuit Corporation
  WiFi6e Test on ATE
  Ping Wang, Advantest
  Next Generation Test Library for RF SOC on ATE
  Haocheng Yuan, Advantest
  Wafer Defect Classification Based On DCNN Model
  Pan Tian, Shanghai Integrated Circuits R&D Center Co., Ltd.
  Research on restoration of color object in Computational Holography based on Genetic Algorithm
  Yufei Liu, Shuang Xu , Cheng Liao , Chao Liu, Wuhan University of Science and Technology
  Design optimization of GaAs/AlGaAs lasers epitaxially grown on Si substrates with threading dislocation density in the range of ~106 cm-2
  Yugeng Shi, Sun Yat-sen University
  FAULT DETECTION OF SENSOR DATA IN SEMICONDUCTOR PROCESSING USING NEURAL NETWORK WITH DYNAMIC TIME WRAPPING LOSS
  Wang Yong, Shanghai Huali Microelectronics Corporation