|
Hyun-Yong Yu is a professor in the department of Electrical Engineering at the Korea University since Feb 2012. He received the B.S. degree in electrical engineering from Korea University, Seoul, Korea, in 2002, and the M.S., and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 2004 and 2009, respectively, for his work on selective heteroepitaxial growth of Germanium for monolithic integration of MOS field-effect transistor (MOSFET) and optical devices.
From 2009 to 2010, he was a process engineer in Lam Research, Fremont, CA, where he worked on process engineering research, development, modification, and evaluation for advanced semiconductor devices especially on 32nm or below technology node. In 2010, he joined Intel Corporation, Hillsboro, OR, USA as PTD process integration engineer. He had worked on exploring and demonstrating the feasibility of new technology elements & integration schemes, materials, process modules, and technology scaling for Cu/ low k interconnection (14nm technology node).
|
