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Min-Hung Lee received the Ph.D. degree in Electrical Engineering from National Taiwan University, Taiwan, China. He joined the Electronics Research & Service Organization, Industrial Technology Research Institute (ERSO/ITRI) in 2002, to research strain engineering for column IV semiconductor, such as strained-Si, SiGe, Si:C FET for high mobility applications. In 2005, he joined the Display Technology Center, Industrial Technology Research Institute (DTC/ITRI) to develop flexible electronic and polycrystalline-silicon TFT technologies for high-performance flat-panel display applications. In 2007 he joined the faculty of the National Taiwan Normal University, Taiwan, China, where he is now a Professor of Institute of Electro-Optical Science and Technology. His research activities are presently in steep slope device in Tunnel/Negative Capacitance FET, Ferroelectric Memory/Neuralnetwork Device, GaN-based power device, HIT/CIGS solar cell, Flexible electronic and 2D material device. He has authored or co-authored over 150 publications and holds 9 U.S. patents.
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